MoSys EPS - Earnings per Share 2006-2021 | MOSY

MoSys eps - earnings per share from 2006 to 2021. Eps - earnings per share can be defined as a company's net earnings or losses attributable to common shareholders per diluted share base, which includes all convertible securities and debt, options and warrants.
MoSys Annual EPS
2020 $-1.32
2019 $-1.19
2018 $-14.82
2017 $-29.07
2016 $-97.20
2015 $-100.80
2014 $-132.00
2013 $-110.00
2012 $-140.00
2011 $56.00
2010 $-144.00
2009 $-122.00
2008 $-118.00
2007 $-56.00
2006 $-34.00
2005 $-20.00
MoSys Quarterly EPS
2021-06-30 $-0.18
2021-03-31 $-0.28
2020-12-31 $-0.19
2020-09-30 $-0.20
2020-06-30 $-0.32
2020-03-31 $-0.61
2019-12-31 $-0.31
2019-09-30 $-0.83
2019-06-30 $-0.05
2019-03-31 $0.00
2018-12-31 $-9.59
2018-09-30 $-6.83
2018-06-30 $0.80
2018-03-31 $0.80
2017-12-31 $0.53
2017-09-30 $-4.40
2017-06-30 $-12.00
2017-03-31 $-13.20
2016-12-31 $-43.80
2016-09-30 $-14.20
2016-06-30 $-18.20
2016-03-31 $-21.00
2015-12-31 $-18.80
2015-09-30 $-30.00
2015-06-30 $-22.00
2015-03-31 $-30.00
2014-12-31 $-38.00
2014-09-30 $-34.00
2014-06-30 $-28.00
2014-03-31 $-32.00
2013-12-31 $-28.00
2013-09-30 $-28.00
2013-06-30 $-30.00
2013-03-31 $-24.00
2012-12-31 $-38.00
2012-09-30 $-30.00
2012-06-30 $-34.00
2012-03-31 $-38.00
2011-12-31 $154.00
2011-09-30 $-36.00
2011-06-30 $-30.00
2011-03-31 $-32.00
2010-12-31 $-36.00
2010-09-30 $-38.00
2010-06-30 $-34.00
2010-03-31 $-36.00
2009-12-31 $-32.00
2009-09-30 $-32.00
2009-06-30 $-32.00
2009-03-31 $-26.00
2008-12-31 $-42.00
2008-09-30 $-20.00
2008-06-30 $-28.00
2008-03-31 $-28.00
2007-12-31 $-32.00
2007-09-30 $-18.00
2007-06-30 $0.00
2007-03-31 $-6.00
2006-12-31 $4.00
2006-09-30 $-18.00
2006-06-30 $-14.00
2006-03-31 $-6.00
2005-12-31 $-8.00
2005-09-30 $0.00
2005-06-30 $-4.00
2005-03-31 $-8.00
Sector Industry Market Cap Revenue
Computer and Technology Semiconductors $0.049B $0.007B
MoSys, Inc. develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented one-transistor-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in one-transistor-SRAM memory results in the technology achieving much higher density than traditional six transistor SRAMs while using the same standard logic manufacturing processes. one-transistor-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making them ideal for embedding large memories in System-on-Chip designs.
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