MoSys PE Ratio 2006-2018 | MOSY

Current and historical p/e ratio for MoSys (MOSY) from 2006 to 2018. The price to earnings ratio is calculated by taking the latest closing price and dividing it by the most recent earnings per share (EPS) number. The PE ratio is a simple way to assess whether a stock is over or under valued and is the most widely used valuation measure. MoSys PE ratio as of April 23, 2019 is 1.41.
MoSys PE Ratio Historical Data
Date Stock Price TTM Net EPS PE Ratio
2019-04-24 0.20 0.00
2018-12-31 0.17 $-0.51 0.00
2018-09-30 0.69 $-0.33 0.00
2018-06-30 1.75 $-0.21 0.00
2018-03-31 1.19 $-0.85 0.00
2017-12-31 1.11 $-1.55 0.00
2017-09-30 0.96 $-3.66 0.00
2017-06-30 1.71 $-4.14 0.00
2017-03-31 2.09 $-4.44 0.00
2016-12-31 2.30 $-4.78 0.00
2016-09-30 7.50 $-3.60 0.00
2016-06-30 4.05 $-4.40 0.00
2016-03-31 6.50 $-4.60 0.00
2015-12-31 10.90 $-5.10 0.00
2015-09-30 14.90 $-5.90 0.00
2015-06-30 19.00 $-6.10 0.00
2015-03-31 21.00 $-6.40 0.00
2014-12-31 18.70 $-6.50 0.00
2014-09-30 24.20 $-6.00 0.00
2014-06-30 31.40 $-5.70 0.00
2014-03-31 45.40 $-5.80 0.00
2013-12-31 55.20 $-5.40 0.00
2013-09-30 37.20 $-6.00 0.00
2013-06-30 40.20 $-6.10 0.00
2013-03-31 47.10 $-6.30 0.00
2012-12-31 34.80 $-7.00 0.00
2012-09-30 40.40 $2.40 16.83
2012-06-30 32.40 $2.10 15.43
2012-03-31 39.70 $2.30 17.26
2011-12-31 42.00 $2.60 16.15
2011-09-30 36.60 $-6.60 0.00
2011-06-30 57.50 $-6.70 0.00
2011-03-31 60.10 $-6.90 0.00
2010-12-31 56.90 $-7.10 0.00
2010-09-30 48.80 $-7.00 0.00
2010-06-30 44.20 $-6.70 0.00
2010-03-31 40.10 $-6.70 0.00
2009-12-31 39.40 $-6.20 0.00
2009-09-30 25.00 $-6.60 0.00
2009-06-30 16.50 $-6.00 0.00
2009-03-31 18.20 $-5.70 0.00
2008-12-31 21.00 $-5.80 0.00
2008-09-30 42.50 $-5.20 0.00
2008-06-30 49.10 $-5.10 0.00
2008-03-31 43.60 $-3.70 0.00
2007-12-31 48.50 $-2.60 0.00
2007-09-30 70.60 $-1.00 0.00
2007-06-30 87.50 $-1.00 0.00
2007-03-31 84.00 $-1.70 0.00
2006-12-31 92.50 $-1.70 0.00
Sector Industry Market Cap Revenue
Computer and Technology Semiconductors $0.009B $0.017B
MoSys, Inc. develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented one-transistor-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in one-transistor-SRAM memory results in the technology achieving much higher density than traditional six transistor SRAMs while using the same standard logic manufacturing processes. one-transistor-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making them ideal for embedding large memories in System-on-Chip designs.
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