MoSys Debt to Equity Ratio 2006-2018 | MOSY

Current and historical debt to equity ratio values for MoSys (MOSY) over the last 10 years.
MoSys Annual Debt/Equity Ratio
2017 1.25
2016 0.54
2015 0.00
2014 0.00
2013 0.00
2012 0.00
2011 0.00
2010 0.00
2009 0.00
2008 0.00
2007 0.00
2006 0.00
2005 0.00
MoSys Quarterly Debt/Equity Ratio
Q2 2018 1.14
Q1 2018 1.21
Q4 2017 1.25
Q3 2017 1.18
Q2 2017 1.20
Q1 2017 0.79
Q4 2016 0.54
Q3 2016 0.28
Q2 2016 0.24
Q1 2016 0.20
Q4 2015 0.00
Q3 2015 0.00
Q2 2015 0.00
Q1 2015 0.00
Q4 2014 0.00
Q3 2014 0.00
Q2 2014 0.00
Q1 2014 0.00
Q4 2013 0.00
Q3 2013 0.00
Q2 2013 0.00
Q1 2013 0.00
Q4 2012 0.00
Q3 2012 0.00
Q2 2012 0.00
Q1 2012 0.00
Q4 2011 0.00
Q3 2011 0.00
Q2 2011 0.00
Q1 2011 0.00
Q4 2010 0.00
Q3 2010 0.00
Q2 2010 0.00
Q1 2010 0.00
Q4 2009 0.00
Q3 2009 0.00
Q2 2009 0.00
Q1 2009 0.00
Q4 2008 0.00
Q3 2008 0.00
Q2 2008 0.00
Q1 2008 0.00
Q4 2007 0.00
Q3 2007 0.00
Q2 2007 0.00
Q1 2007 0.00
Q4 2006 0.00
Q3 2006 0.00
Q2 2006 0.00
Q1 2006 0.00
Q4 2005 0.00
Q3 2005 0.00
Q2 2005 0.00
Q1 2005 0.00
Sector Industry Market Cap Revenue
Computer and Technology Semiconductors $0.007B $0.009B
MoSys, Inc. develops, licenses and markets innovative memory technologies for semiconductors. MoSys' patented one-transistor-SRAM technologies offer a combination of high density, low power consumption, high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in one-transistor-SRAM memory results in the technology achieving much higher density than traditional six transistor SRAMs while using the same standard logic manufacturing processes. one-transistor-SRAM technologies also offer the familiar, refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition, these technologies can reduce operating power consumption by a factor of four compared with traditional SRAM technology, contributing to making them ideal for embedding large memories in System-on-Chip designs.
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